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P4C1258 ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) - 15/20/25/35 ns (Commercial/Industrial) Low Power Single 5V10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) - 24-Pin 300 mil DIP, SOJ
DESCRIPTION
The P4C1258 is a 262,144-bit ultra high speed static RAM organized as 64K x 4. The CMOS memory requires no clock or refreshing and has equal access and cycle times. Inputs and outputs are fully TTL-compatible. The RAM operates from a single 5V10% tolerance power supply. With battery backup, data integrity is maintained for supply voltages down to 2.0V. Current drain is typically 10 A from a 2.0V supply. Access times as fast as 15 nanoseconds are available, permitting greatly enhanced system speeds. CMOS is utilized to reduce power consumption. The P4C1258 is available in a 24-pin 300 mil DIP or SOJ packages providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
DIP (P4) SOJ (J4)
Document # SRAM123 REV OR 1 Revised October 2005
P4C1258
MAXIMUM RATINGS(1)
Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value -0.5 to +7 -0.5 to VCC +0.5 -55 to +125 Unit V Symbol TBIAS TSTG PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value -55 to +125 -65 to +150 1.0 50 Unit C C W mA
VTERM TA
V C
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Grade(2) Industrial Commercial Ambient Temperature -40C to +85C 0C to +70C GND 0V 0V VCC 5.0V 10% 5.0V 10%
CAPACITANCES(4)
VCC = 5.0V, TA = 25C, f = 1.0MHz Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions Typ. Unit VIN = 0V VOUT = 0V 5 7 pF pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2) Symbol VIH VIL VHC VLC VCD VOL VOH ILI ILO ISB ISB1 Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Clamp Diode Voltage VCC = Min., IIN = 18 mA Output Low Voltage (TTL Load) Output High Voltage (TTL Load) Input Leakage Current Output Leakage Current IOL = +8 mA, VCC = Min. IOH = -4 mA, VCC = Min. VCC = Max. VIN = GND to VCC VCC = Max., CE = VIH VOUT = GND to VCC 2.4 -5 -5 ___ ___ +5 +5 35 10 Test Conditions P4C1258 Min Max 2.2 -0.5(3) -0.5
(3)
Unit V V V V V V V A A mA
VCC +0.5 0.8 0.2 -1.2 0.4
VCC -0.2 VCC +0.5
CE VIH Standby Power Supply Current (TTL Input Levels) VCC = Max ., f = Max., Outputs Open Standby Power Supply Current (CMOS Input Levels) CE VHC VCC = Max., f = 0, Outputs Open VIN VLC or VIN VHC
mA
Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with VIL and IIL not more negative than -3.0V and -100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested.
Document # SRAM123 REV OR
Page 2 of 9
P4C1258
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol ICC Parameter Dynamic Operating Current* Temperature Range Commercial Industrial -15 160 170 -20 125 135 -25 115 120 -35 110 115 Unit mA mA
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL
DATA RETENTION CHARACTERISTICS
Symbol VDR ICCDR tCDR tR Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time CE VCC -0.2V, VIN VCC -0.2V or VIN 0.2V Test Conditions Min 2.0 10 0 tRC 15 1500 2000 Typ.* VCC = 2.0V 3.0V Max VCC = 2.0V 3.0V Unit V A ns ns
*TA = +125C

tRC = Read Cycle Time This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
Document # SRAM123 REV OR
Page 3 of 9
P4C1258
AC CHARACTERISTICS--READ CYCLE
(VCC = 5V 10%, All Temperature Ranges)(2)
Sym. tRC tAA tAC tOH tLZ tHZ tPU tPD
Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Hold from Address Change Chip Enable to Output in Low Z Chip Disable to Output in High Z Chip Enable to Power Up Time Chip Disable to Power Down Time
-15 Min 15 15 15 2 2 8 0 15 0 2 3 Max
-20 Min Max 20 20 20 2 3 9 0 20 Min 25
-25 Max 25 25 2 3 10 0 25 35
-35 Min Max 35 35
Unit ns ns ns ns ns ns ns ns
11 35
TIMING WAVEFORM OF READ CYCLE NO. 1(5)
TIMING WAVEFORM OF READ CYCLE NO. 2(6)
Notes: 5. CE is LOW and WE is HIGH for READ cycle. 6. WE is HIGH, and address must be valid prior to or coincident with CE transition LOW.
7. Transition is measured 200mV from steady state voltage prior to change with specified loading in Figure 1. This parameter is sampled and not 100% tested. 8. Read Cycle Time is measured from the last valid address to the first transitioning address.
Document # SRAM123 REV OR
Page 4 of 9
P4C1258
AC CHARACTERISTICS - WRITE CYCLE
(VCC = 5V 10%, All Temperature Ranges)(2) Sym. tWC tCW tAW tAS tWP tAH tDW tDH tWZ tDW Parameter Write Cycle Time Chip Enable Time to End of Write Address Valid to End of Write Address Set-up Time Write Pulse Width Address Hold Time from End of Write Data Valid to End of Write Data Hold Time Write Enable to Output in High Z Output Active from End of Write 2 -15 13 12 12 0 12 0 7 0 6 2 20 15 15 0 15 0 8 0 8 2 -20 25 18 18 0 18 0 10 0 10 3 -25 35 25 25 0 25 0 15 0 15 -35 Min Max Min Max Min Max Min Max Unit ns ns ns ns ns ns ns ns ns ns
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED) (9) WE
Notes: 9. CE and WE must be LOW for WRITE cycle. 10. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state. 11. Write Cycle Time is measured from the last valid address to the first transition address.
12. Transition is measured 200mV from steady state voltage prior to change with specified loading in Figure 1. This parameter is sampled and not 100% tested.
Document # SRAM123 REV OR
Page 5 of 9
P4C1258
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE CONTROLLED)(9) CE
AC TEST CONDITIONS
Input Pulse Levels Input Rise and Fall Times Input Timing Reference Level Output Timing Reference Level Output Load GND to 3.0V 3ns 1.5V 1.5V See Figures 1 and 2
TRUTH TABLE
Mode Standby Read Write CE H L L WE X H L Output High Z DOUT DIN Power Standby Active Active
Figure 1. Output Load
* including scope and test fixture. Note: Because of the ultra-high speed of the P4C1258, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. Long high-inductance leads that cause supply bounce must be avoided by bringing the VCC and ground planes directly up to the contactor fingers. A 0.01 F high
Figure 2. Thevenin Equivalent
frequency capacitor is also required between VCC and ground. To avoid signal reflections, proper termination must be used; for example, a 50 test environment should be terminated into a 50 load with 1.73V (Thevenin Voltage) at the comparator input, and a 116 resistor must be used in series with DOUT to match 166 (Thevenin Resistance).
Document # SRAM123 REV OR
Page 6 of 9
P4C1258
ORDERING INFORMATION
SELECTION GUIDE
The P4C1258 is available in the following temperature, speed and package options.
Temperature Range Commercial Industrial Package Plastic DIP Plastic SOJ Plastic DIP Plastic SOJ Speed 15 -15PC -15JC -15PI -15JI 20 -20PC -20JC -20PI -20JI 25 -25PC -25JC -25PI -25JI 35 -35PC -35JC -35PI -35JI
1513 10
Document # SRAM123 REV OR
Page 7 of 9
P4C1258
Pkg # # Pins Symbol A A1 b C D e E E1 E2 Q
J4
24 (300 mil) Min Max 0.128 0.148 0.082 0.016 0.020 0.007 0.010 0.620 0.630 0.050 BSC 0.335 BSC 0.292 0.300 0.267 BSC 0.025 -
SOJ SMALL OUTLINE IC PACKAGE
Pkg # # Pins Symbol A A1 b b2 C D E1 E e eB L
P4
24 (300 Mil) Min Max 0.210 0.015 0.014 0.022 0.045 0.070 0.008 0.014 1.230 1.280 0.240 0.280 0.300 0.325 0.100 BSC 0.430 0.115 0.150 0 15
PLASTIC DUAL IN-LINE PACKAGE
Document # SRAM123 REV OR
Page 8 of 9
P4C1258
REVISIONS
DOCUMENT NUMBER: DOCUMENT TITLE: REV. OR ISSUE DATE Oct-05 SRAM123
P4C1258 ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
ORIG. OF CHANGE JDB
DESCRIPTION OF CHANGE New Data Sheet
Document # SRAM123 REV OR
Page 9 of 9

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